One-sided rectifying p–n junction diodes fabricated from n-CdS and p-ZnTe:Te semiconductors
نویسندگان
چکیده
منابع مشابه
Room-Temperature Near-Infrared Electroluminescence from Boron-Diffused Silicon Pn-Junction Diodes
*Correspondence: Deren Yang, State Key Lab of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Zheda Road 38, Hangzhou 310027, China e-mail: [email protected] Silicon pn-junction diodes with different doping concentrations were prepared by boron diffusion into Czochralski n-type silicon substrate. Their room-temperature near-infrared electroluminescence ...
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ژورنال
عنوان ژورنال: Materials Research Express
سال: 2016
ISSN: 2053-1591
DOI: 10.1088/2053-1591/3/9/095904